Abstract: This letter presents a Ku-band high-input 1-dB compression point (IP1dB) and low-power low-noise amplifier (LNA). The large-transistor technique is employed to enhance IP1dB with low noise ...
Abstract: In this study, SiGe channel nanosheet field-effect transistor (NSFET) with a novel channel release stopping layer (CRSL), namely CRSL-SiGe NSFET, is proposed to addresses the issue of ...
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