Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...
The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
STMicroelectronics has unveiled three new radiation-hardened low-voltage rectifier diodes designed for power circuits in Low ...
The junction composed of traditional metals and 2D semiconductors is a key component of semiconductor devices. Ideally, Schottky barrier height (SBH) can be obtained based on the relative alignment of ...
Members can download this article in PDF format. Power systems employ diodes to perform a variety of functions. For example, diodes can protect against damage due to power-source reverse-polarity ...
STMicroelectronics has introduced three radiation-hardened low-voltage rectifier diodes intended for power conversion and ...
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